异丁基锗烷

异丁基锗烷IBGe,化学式:(CH3)2CHCH2GeH3)是一种有机锗化合物。它是一种无色不稳定的液体,用于有机金属化学气相沉积法。在张力硅的应用中,异丁基锗烷用于形成沉积的锗薄膜和含锗的半导体薄膜(例如锗化硅)。它还用于制备NAND Flash中的GeSbTe。

参考资料
拓展阅读

*[https://web.archive.org/web/20120704095426/http://www.lpn.cnrs.fr/fr/ELPHYSE/HeterOpSi.php Élaboration et Physique des Structures Épitaxiées (LPN) Hétérostructures III-V pour l’optoélectronique sur Si]: Article in French from LPN-CNRS, France.
[http://202.127.1.11/jcg/287/2872103.pdf Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films]; Journal of Crystal Growth*, January 25, 2006.
[https://web.archive.org/web/20070310201202/http://www.reed-electronics.com/semiconductor/article/CA6319057?industryid=3102 Ge Precursors for Strained Si and Compound Semiconductors]; Semiconductor International*, April 1, 2006.
[https://web.archive.org/web/20071021094801/http://ecsmeet2.peerx-press.org/ms_files/ecsmeet2/2006/03/13/00040125/00/40125_0_art_file_1_1142292562.pdf Development of New Germanium Precursors for SiGe Epitaxy]; Deo Shenai and Egbert Woelk, Presentation at 210th ECS Meeting, Cancun, Mexico, October 29, 2006*.

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